semiconductor process engineers

Abstract: Optical proximity correction (OPC) recipes grow as engineers add local rules to repair newly discovered lithography hotspots. Each correction can interact with existing rules, while lessons from commercial-tool trials remain scattered across code and logs. \system combines a Virtual Process Engineer (VPE) harness with a Skill Bank of measured engineering experience. The harness equips a frozen language model with process manuals, layout analysis, recipe editing, and commercial-tool evaluation. The actor proposes changes to the global parameters, local targeted rules, or diagnostic trials. After each evaluation, an LLM reflector and curator turn the measured response into evidence-linked judgments. The actor retrieves them before its next trial. Feasible improvements update the retained recipe; every measured trial informs the Skill Bank that guides the next edit. The model weights remain fixed. On a FreePDK45-derived benchmark with ten commercial-tool evaluations per case, \system reduces the mean per-case maximum edge placement error from 18.294 to 5.361 nm on Poly and from 22.052 to 15.692 nm on Metal1. Every final recipe satisfies the predefined quality constraints and improves the maximum error by at least 0.1 nm.

Abstract: Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains elusive. Here, we establish a multiscale framework connecting plasma-defined deposition conditions to macroscopic device functionality in sputtered SiO$_x$/Cu/SiO$_x$-based systems. By combining large-scale statistical analysis of more than 50,000 experimentally characterized devices with physics-based plasma and atomistic simulations, we show that device behavior does not emerge from deterministic process-to-performance mappings, but from a probabilistic cascade spanning defect formation, defect-state evolution, and functional-regime emergence. Data-driven clustering reveals a continuous functional state space composed of operational switching types, while inverse modeling identifies the reconstructed oxygen-vacancy density as an effective latent descriptor capturing the combined influence of structural disorder and defect topology. This latent descriptor is strongly coupled to both Cu redistribution and electrical response, linking otherwise hidden material properties to observable device characteristics. Furthermore, macroscopic switching behavior is argued to arise from ensemble integration across spatially heterogeneous subdomains, providing a physical explanation for the pronounced variability of large-area devices. These findings shift the perspective from deterministic defect engineering toward probabilistic defect-state design and establish a physically grounded framework for understanding and controlling functional variability in such oxide-based systems, such as memristive or resistive-switching devices.

Abstract: Physical modeling and inverse design require computation that can continue from reusable state. We introduce SHRAV, an architecture-independent computational framework organized around State, Hypothesis, Reason, Action, and Verify. Its central mechanism is a state-continuation core with declared reuse boundaries and explicit roles for learned evolution and numerical quantities. Forward configurations evolve predictive state and read out physical responses; inverse-design configurations additionally generate target-directed modifications and consume evaluator feedback. Electromagnetic world-model studies are mapped to forward configurations, with selected readout and reuse diagnostics reported here. Computational lithography demonstrates an inverse-design configuration: four fixed-weight design updates improve thresholded aerial-image intersection-over-union from 0.5313 to 0.8153 under independent scalar-pupil replay, with maximum absolute prediction-replay difference approximately 0.000824 between predictor estimates and independent replay.